基于SOI场效应管控制的背栅极碳纳米管场发射结构研究

摘要

Carbon nanotube cold cathodes have promising applications, however, their electron emission ability, emission current uniformity and stability,and sensitivity of gate modulation still can not satisfy the requests of large power devices. To improve above performances of carbon nanotubes array, this project presents an Individually Transistor-Ballasted Back-Gate Carbon Nanotube Arrays on SOI(silicon on insulator)substrate. Then through the computer simulation and theory analysis,we prove that this triod structure has the gate modulation,good emission uniformity and stability.%针对目前碳纳米管场发射电子源存在的问题，以提高碳纳米管场发射阵列的大电流发射能力、电流均匀性和稳定性以及电流调制灵敏度为目标，基于绝缘硅( SOI)技术，提出并制备出一种独立场效应管控制的碳纳米管场发射阵列三极结构，并通过理论分析和实验验证等手段，发现其具有良好的栅极调制效果、优良的发射均匀性和稳定性。