Accurate Intrinsic Gate Capacitance Model for Carbon Nanotube-Array Based FETs Considering Screening Effect

摘要

In this letter, an accurate semi-analytical model for the intrinsic gate capacitance of carbon nanotube (CN)-array based back-gated field-effect transistors (FETs) is proposed. The model accounts for electrostatic screening effect for any given number of nanotubes, their diameter, pitch, and gate-dielectric thickness. It is shown that screening effect varies significantly not only with the change in density but also with the number of nanotubes and must be considered while modeling the intrinsic gate capacitance of array-based CNFETs for both high-performance and thin-film transistor applications.