沉积TiB2薄膜的电极真空绝缘性能实验研究

摘要

The vacuum gap,consisting of sphere (cathode)-plane(anode) withspecific structure is used to simulate a micro-discharging process between electrodes in the special vacuum device. The crystal TiB2 film of high conjunctive intensity can be deposited on the cathode sphere with the IBAD (ion beam assisted deposition) technology. Experiment result demonstrates that its surface isn’t oxidized by contrast with the stainless steel at 1 000 ℃. Under the single pulse high voltage, the film shows feeblish discharging characteristic after the bombardment of the high-energy microparticles at hundreds times. This can increase the voltage holding capability and reduce the dynamic load of pulse power.%利用由一定结构的球面（阴极）-平板（阳极）组成的真空间隙，模拟特种电真空器件中电极间的微放电过程。用离子束辅助沉积（IBAD）法，在阴极球面上沉积出高结合强度的晶化TiB2薄膜。实验证明：在高达1000℃的温度下，相比不锈钢材料，薄膜表面几乎不被氧化；在单次脉冲高压作用下和在经受数百次高能微粒子轰击后，仍呈现出弱放电特征，既提高了耐压能力，又降低了脉冲电源的动态负载。