总剂量效应对FRAM器件单粒子翻转敏感性的影响

摘要

Ferroelectric random access memory(FRAM)is a type of nonvolatile memory that possesses many advantages,such as high operation speed and low power consumption[1].In this work,the impact of total ionizing dose(TID)on single event upset(SEU)sensitivity was studied for FRAMs.The influence of different test modes and memory patterns on FRAMs was investigated.Parameters of the test devices are listed in Table 1.