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Radiation-tolerant unit MOSFET hardened against single event effect and total ionizing dose effect
Radiation-tolerant unit MOSFET hardened against single event effect and total ionizing dose effect
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机译:耐辐射单元MOSFET增强了抗单事件效应和总电离剂量效应的能力
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摘要
Provided is a radiation-tolerant unit MOSFET to block a leakage current path caused by a total ionizing dose effect and reduce influence of a current pulse generated due to a single event effect. The radiation-tolerant unit MOSFET includes a poly gate layer for designating a gate region and at least one dummy gate region, a source and a drain, and a P+ layer and a P-active layer for specifying a P+ region to the source and the drain, and a dummy drain allowing application of a voltage. An electronic part that may normally operate is provided even a radiation environment where particle radiation and electromagnetic radiation are present.
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