RADIATION-TOLERANT UNIT MOSFET HARDENED AGAINST SINGLE EVENT EFFECT AND TOTAL IONIZATION DOSE EFFECT

摘要

Provided is a radiation-tolerant 3D unit MOSFET having at least one selected from a dummy drain (DD), an N-well layer (NW), a deep N-well layer (DNW), and a P+ layer to minimize an influence by a total ionization dose effect and an influence by a single event effect.