RADIATION-TOLERANT THREE-DIMENSIONAL UNIT MOSFET HARDENED AGAINST SINGLE EVENT EFFECT AND TOTAL IONIZING DOSE EFFECT

摘要

The present invention relates to a radiation-tolerant three-dimensional unit MOSFET, and proposes a radiation-tolerant three-dimensional unit MOSFET to which at least one of a dummy drain (DD), an n-well (NW) layer, a deep n-well (DNW) layer, and a p+ layer is selectively added to minimize a total event effect and a single event effect.