氧化锌锡薄膜晶体管的研究

摘要

在ITO玻璃基底上用射频磁控溅射技术生长氧化锌锡(ZnSnO)沟道有源层、用PECVD生长SiO2薄膜作为薄膜晶体管的栅绝缘层研制了薄膜晶体管(TFT),器件的场效应迁移率最高达到μn=9.1 cm2/(V·s),阈值电压-2V,电流开关比为104.%Thin film transistors with zinc tin oxide as the active channel layer were fabricated on ITO glass by rf magnetron sputtering. SiO2 gate dielectric was grown using plasma-enhanced chemical vapor deposition (PECVD). These devices operate with a maximum field effect mobility of 9. 1 cm2/V, s, threshold voltage of -2 V, and current on/off ratio of 104.