Improvement of Stability and Performance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by Zinc-Tin-Oxide Spray Coating

摘要

We report the effect of zinc-tin-oxide (ZTO) by spray coating on indium gallium zinc oxide (IGZO) thin-film transistor (TFT) for the improvement of both stability and performance. The IGZO/ZTO TFT exhibits the field effect mobility (mu(FE)) of 18.39 cm(2)/V.s, threshold voltage (V-Th) of 0.1 V, and subthreshold swing ( SS) of 0.16V/dec. The TFT shows excellent stabilities: Delta V-Th of -1.0 V for negative bias illumination stress (NBIS) and 0.4 V for hot carrier stress. These excellent performance and stability are correlated with the built-in electric field by charge distribution at the IGZO/ZTO hetero-junction. Therefore, ZTO spray coating on IGZO semiconductor can be a good technique to improve device stability.