-- ZTO TFT High Performance Solution-Processed Zinc-Tin-Oxide Thin-Film Transistors Employing Ferroelectric Copolymers Fabricated at Low Temperature for Transparent Flexible Displays and encapsulation process method of ZTO TFT device using fluoroploymer thin film

摘要

The present invention is a high performance low temperature solution-processed zinc-tin which has developed ferroelectric copolymers prepared at a low temperature of 100 ° C. or lower for transparent flexible displays using a charge-screening method. The present invention provides a ZTO TFT device encapsulation process method using a zinc-tin-oxide (ZTO) thin film transistor (ZTO TFT) and a fluoroploy thin film as a protective layer. In order to improve device characteristics of ZTO TFTs using metal oxide semiconductor materials, a semiconductor device encapsulation process using a fluoroploymer thin film as a protective layer is used, and a fluoropolymer (PVDF-) composed of carbon-fluorine dipole bonds is used. TrFE) to improve the electrical / electronic properties of ZTO TFTs through passivation using a low temperature solution process. Restores intrinsic charge transport properties of bad TFT devices through chemical bonding with charge impurities generated during the process in the field of TFT-based semiconductor devices and circuits, and based on low temperature solution process below 100 ℃ using fluoropolymer The fluorocarbon passivation is practical because there is no need for complicated and expensive equipment, and the stability of TFT device is ensured for long time operation by suppressing chemical bond between water and water by hydrophobic surface property.