-- ZTO TFT High Performance Solution-Processed Zinc-Tin-Oxide Thin-Film Transistors Employing Ferroelectric Copolymers Fabricated at Low Temperature for Transparent Flexible Displays and encapsulation process method of ZTO TFT device using fluoroploymer thin film

摘要

The present invention provides a high-performance solution-processed zinc-tin-oxide thin film transistor (ZTO TFT) applying a ferroelectric copolymer produced at low temperatures of 100°C or lower for a transparent flexible display using a charge-screening method, and an encapsulation process method of a ZTO TFT device using a fluoropolymer thin film as a protection layer. A semiconductor device encapsulation process using the fluoropolymer thin film as the protection layer is used to improve characteristics of ZTO TFTs using a metal oxide semiconductor material, and a fluoropolymer (PVDF-TrFE) composed of a carbon-fluorine dipole bond is used to improve electric/electronic characteristics of the ZTO TFTs through passivation using a low temperature solution process.