Metal-semiconductor-metal photodetectors and coplanar transmission lines on SOI for high-speed interconnection.

摘要

This thesis studies metal-semiconductor-metal (MSM) photodetectors and coplanar transmission lines (CTL's) on Si-on-insulator (SOI) for gigabit-per-second (Gb/s) data rate optical interconnection. It addresses the challenges and solutions raised from the device design, fabrication and characterization in the hundred gigahertz (GHz) frequency domain.;Part of the work is devoted to improving the speed and sensitivity of Si MSM photodetectors at 0.8 ;Characteristics of CTL's on multilayer substrates expressed in analytical formulas are obtained using conformal mapping. The obtained formulas are then simplified into forms suitable for computer-aided CTL design. The accuracy of these formulas is verified experimentally on a variety of CTL's. To ensure the experimental accuracy, a new technique, differential electro-optic (EO) sampling with a delay-time resolution of 30 fs and a spatial resolution of 1 ;Novel optoelectronic devices based on the polarization effects of transmission gratings and MSM photodetectors, including the first solid-state wavelength detector and linear polarization direction detectors (LPDD's), are achieved through integration of MSM photodetectors and subwavelength gratings.