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Copper and copper alloy thin films: Evolution of resistivity and microstructure.

机译:铜和铜合金薄膜:电阻率和微观结构的演变。

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摘要

The impact of eleven alloying elements, at two nominal concentrations of 1.0 and 3.0 at%, on the grain structure, texture and resistivity of Cu was investigated. The alloying elements were Mg, Ti, In, Sri, Al, Ag, Co, Ir, Nb, W and B. The films were electron beam evaporated onto oxidized silicon wafers and had thicknesses in the range of 420 to 560 run. The ex situ annealing treatments were done at 400, 650 and 950°C. The temperature range for the in situ studies was 100 to 950°C. In the as-deposited state, the alloy films had a higher resistivity, a significantly finer grain size, and a weaker texture when compared to pure Cu. With some exceptions, ex situ annealing reduced the resistivity and strengthened the texture. In addition, it was found that the higher the annealing temperature, the lower the resistivity and the stronger the 111> component of the fiber texture. Apart from the two Co-containing films, the 400°C, 5 hr annealed alloy films had smaller grain sizes than the pure Cu film, and, additionally, the grain sizes for the nominally 3.0 at% films were smaller than those for the nominally 1.0 at% films. The ex situ and in situ studies showed a clear inverse correlation such that the higher the in situ grain growth temperature, the lower the grain size after the ex situ 400°C, 5 hr anneal. By contrast, the strength of texture after this anneal showed a direct correlation with the grain size. The notable exceptions, for which grain size and texture did not correlate, were Cu(1.0Nb) and Cu(2.4Nb). For the 400°C, 5 hr annealed films, Cu(0.4B) and Cu(1.0Ag) had the lowest resistivities at 2.0 and 2.1μΩ-cm, respectively, Cu(2.8Co) showed the largest average grain size at 1080 nm, and Cu(3.0Ti) had the strongest 111> fiber texture at 94.2 vol%. The resistivity, grain size and 111> vol% for the pure Cu film after the same anneal were 2.0μΩ-cm, 790 nm and 59.8, respectively. No alloy film simultaneously satisfied the requirements of a low resistivity, and a larger grain size and a stronger texture than pure Cu.
机译:研究了两种名义浓度为1.0和3.0 at%的11种合金元素对Cu的晶粒结构,织构和电阻率的影响。合金元素为Mg,Ti,In,Sri,Al,Ag,Co,Ir,Nb,W和B。将薄膜电子束蒸发到氧化硅晶片上,厚度在420至560纳米范围内。 原位退火处理是在400、650和950°C下进行的。原位研究的温度范围是100至950°C。与纯铜相比,在沉积状态下,合金膜具有更高的电阻率,明显更好的晶粒尺寸和更弱的织构。除某些例外,非原位退火会降低电阻率并增强质感。另外,发现退火温度越高,电阻率越低,纤维织构的<111>成分越强。除了两个含Co膜之外,经400°C,5小时退火的合金膜的晶粒尺寸小于纯Cu膜,此外,标称3.0 at%膜的晶粒尺寸小于标称3.0 At%膜的晶粒尺寸。 1.0 at%的胶片。 原位 in situ 研究显示出明显的反相关性,即 insitu 晶粒生长温度越高,则晶粒尺寸越小。 原位 400°C,退火5小时。相比之下,退火后的织构强度与晶粒尺寸直接相关。 Cu(1.0Nb)和Cu(2.4Nb)是晶粒尺寸和织构不相关的显着例外。对于400°C,5小时退火的薄膜,Cu(0.4B)和Cu(1.0Ag)在2.0和2.1μΩ-cm处的电阻率最低,Cu(2.8Co)在1080 nm处显示出最大的平均晶粒度,并且Cu(3.0Ti)的<111>纤维织构最强,为94.2 vol%。在相同的退火之后,纯Cu膜的电阻率,晶粒尺寸和<111> vol%分别为2.0μΩ-cm,790 nm和59.8。没有任何一种合金膜可以同时满足低电阻率,比纯铜更大的晶粒尺寸和更强的织构的要求。

著录项

  • 作者

    Gungor, Ali.;

  • 作者单位

    Carnegie Mellon University.;

  • 授予单位 Carnegie Mellon University.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2002
  • 页码 203 p.
  • 总页数 203
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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