磁控溅射铜薄膜微观结构对其电爆性能的影响∗

摘要

采用直流磁控溅射法在不同溅射功率和工作气压条件下沉积 Cu 薄膜,对其进行 X射线衍射、原子力显微镜、电阻率测试,分析了工艺参数对 Cu 薄膜的沉积速率、微观结构和电阻率的影响。通过紫外光刻技术将Cu薄膜制成桥箔,采用电爆测试平台获得Cu桥箔的电爆参数,研究了Cu薄膜的晶粒尺寸、择优取向对其电爆性能的影响。结果表明：随溅射功率的增大,Cu薄膜的沉积速率增加、晶粒尺寸增大、Cu(111)晶面择优取向特性变差,且电阻率降低；随溅射工作气压增大,Cu薄膜的沉积速率降低、晶粒尺寸减小、Cu(111)晶面择优取向越明显,且电阻率增加。对于相同桥区参数的 Cu 桥箔,晶粒尺寸越小,其爆发时刻就越早；Cu (111)晶面择优取向越明显,其爆发电流和峰值功率就会越大。%Copper (Cu)thin films were deposited by DC magnetron sputtering method.The structure,morphol-ogy and resistivity of the deposited Cu films have been examined with respect to the sputtering power and sput-tering pressure.The exploding bridge foils were fabricated with photolithography,and their electro-explosive performances were studied by the test circuit.Both increasing sputtering power and decreasing sputtering pres-sure result in quicker deposition rate,larger grain size and lower resistivity of the deposited Cu films.Besides, the samples have higher crystalline orientation along the (1 1 1 )direction with decreasing sputtering power and increasing sputtering pressure.Moreover,the Cu bridge foils with larger grain size have an earlier burst mo-ment.Meanwhile,the bridge foils have higher peak current and peak power with higher Cu (111)preferred ori-entation.