Effect of Ar/(Ar+O_2) ratio on the microstructures and dielectric properties of Zn_2SnO_4 thin films by RF magnetron sputtering

摘要

The microstructures and dielectric properties of Zn2SnO4 thin films were investigated. Zn_2SnO_4 thin films were prepared using the radio frequency magnetron sputtering with various Ar/(Ar+O_2) ratios. When the Ar/ (Ar+O_2) ratio was increased from 0.4 to 0.8, the grain size became larger gradually. The thickness and surface roughness of Zn_2SnO4 thin films increased as the Ar/ (Ar+O_2) ratio increased from 0.4 to 0.8. Dielectric constants (ε_r) of 15-25 and loss factor of 0.42-0.44 of Zn_2 SnO_4 thin films were measured at 1 MHz with Ar/(Ar+O_2) ratio in the range of 0.4-0.8.