Radiation effects and temperature effects of SOI CMOS technology.

摘要

Silicon-on-Insulator (SOI) CMOS technology is currently being considered for a variety of aerospace, military, and commercial electronics applications requiring robust operation under extreme environment conditions because of its many advantages over bulk CMOS technologies, including: total device isolation, high-speed, low power consumption, and high density.; In this work, radiation effects and temperature effects in SOI CMOS technologies have been comprehensively investigated. Two-dimensional (2-D) simulation using MEDICI was performed to understand the underlying physical origins of the observed changes after radiation and at different temperatures. In Chapter 1, SOI technology is reviewed in terms of wafer fabrication, performance of SOI CMOS compared with bulk CMOS, and typical operation mechanisms in partially- and fully-depleted SOI MOSFETs.; Chapters 2 and 3 discuss radiation effects and cryogenic temperature effects for 0.25 μm fully-depleted SOI MOSFETs fabricated on SIMOX. Transistors with two different gate structures (“H-gate” and “regular-gate”) were investigated from several different perspectives, such as threshold voltage shift, kink effects, and parasitic leakage. The results show that the devices with an H-gate structure have better performance than those with a regular-gate structure, both after radiation and at the low temperatures, because the H-gate device is edgeless and has a body-tie.; Proton radiation effects in 0.35 μm partially-depleted SOI MOSFETs on UNIBOND are discussed in Chapter 4. The radiation response is characterized by threshold voltage shifts of both the front-gate and the back-gate transistors. An increase of the front gate threshold voltage is observed on the n-channel MOSFETs after irradiation, and is attributed to radiation-induced interface states at the front gate oxide/silicon interface.; Chapter 5 presents temperature effects (from 86K to 573K) of the same technology investigated in Chapter 4. The threshold voltage shift, the effective mobility, and the impact ionization parameters as a function of temperature are determined for this 0.35μm partially-depleted SOI CMOS technology.; In Chapter 6, a new technique using the collector current characteristics of a lateral bipolar transistor found in SOI MOSFETs is proposed to identify small radiation-induced changes, and its utility is demonstrated by applying it to the analysis of proton radiation damage in SOI CMOS devices on UNIBOND.; Chapter 7 presents the results of an investigation of the proton tolerance of the multiple-threshold voltage and multiple-breakdown voltage CMOS device design points contained in a 0.18μm system-on-a-chip CMOS technology. (Abstract shortened by UMI.)