METHOD TO TEST SEMICONDUCTOR CMOS/SOI OF LSI TECHNOLOGY FOR RESISTANCE TO EFFECTS OF SINGLE FAILURES FROM IMPACT OF HEAVY CHARGED PARTICLES OF SPACE

摘要

FIELD: testing equipment.;SUBSTANCE: in the method for testing of semiconductor CMOS/SOI of LSI technology for resistance to effects of single faults from impact of heavy charged particles (HCP) of space by means of radiation of a limited LSI sample with pulse ionising radiation, radiation is produced by gamma-neutron radiation of a pulse nuclear reactor (PNR) with average energy of 1.0-3.0 MeV or pulse X-ray radiation of electrophysical plants (EPP) with an equivalent dose, causing generation of a radiation-induced charge equal with HCP in the sensitive LSI volume, and for detection of resistance to HCP impact with the threshold value of linear losses of energy LETth in the range from units to a hundred of MeV·cm²/mg, the value of coefficient of relative efficiency RDEF (Relative Dose Enhancement Factor) is used on impact of full absorbed dose of X-ray or gamma-radiation in respect to the LHTTH value using the provided ratio.;EFFECT: reduced cost and duration of tests for radiation resistance, higher reliability of test results.;7 cl, 6 dwg, 8 tbl