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Characterization of heavy-ion, neutron and alpha particle-induced single-event transient pulse widths in advanced CMOS technologies.

机译:先进CMOS技术中重离子,中子和α粒子诱导的单事件瞬态脉冲宽度的表征。

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摘要

Radiation-induced soft errors have become a key reliability issue for advanced semiconductor integrated circuits. With technology scaling, a large fraction of the observed soft failures are estimated to be related to latched single-event transients (SETs). Precise knowledge of the particle-induced transient pulse widths is important for determining error rates and for the design of hardening techniques to mitigate the effect of these transients.;This work presents a novel, autonomous pulse characterization circuit technique to measure the distribution of SET pulse widths for different radiation environments. The pulse characterization technique has been implemented in a range of CMOS technologies and test chips have been used to measure the distribution of SET pulse widths for heavy-ions, neutrons and alpha particles. The dissertation focuses on test results from IBM 130-nm and 90-nm bulk CMOS processes.;Heavy-ion SET measurements show a reduction in the threshold for a measurable SET from about 7 MeV-cm2/mg for 130-nm to less than 2 MeV-cm 2/mg for 90-nm. SET pulse widths ranging from about hundred ps to over 1 ns were measured with heavy-ions in 130-nm and 90-nm processes and the pulse widths were found to increase when scaling from 130-nm to 90-nm. Technology scaling trends in SET pulse widths are explained based on experimental measurements and with the use of mixed-mode 3D-TCAD simulations. Reasons for long transients measured at low LETs in the 90-nm process, including the pulse broadening phenomenon, are examined. Results indicate that lower drive currents and reduced contact size to the well region are factors that lead to an increase in SET pulse widths with scaling. The presence of a parasitic bipolar charge collection in these processes, triggered by a well potential collapse effect, leads to wider transients. Simulation and experimental results illustrate that the use of larger contacts to the well region mitigates the well potential collapse and hence limits the SET pulse width.;The SET measurements reported in this work are the first-ever for neutrons and alpha particles and these results are important for predicting error rates for commercial terrestrial applications. Most neutron and alpha particle-induced SETs were found to be of the order of hundreds of picoseconds. Neutron and alpha failures-in-time (FIT) rates were found to be about 10-5 FIT/inverter.
机译:辐射引起的软错误已成为高级半导体集成电路的关键可靠性问题。通过技术扩展,估计观察到的大部分软故障都与锁存的单事件瞬态(SET)有关。精确了解粒子引起的瞬态脉冲宽度对于确定错误率和设计硬化技术以减轻这些瞬变的影响非常重要。这项工作提出了一种新颖的,自主的脉冲表征电路技术来测量SET脉冲的分布不同辐射环境的宽度。脉冲表征技术已在一系列CMOS技术中实现,测试芯片已用于测量重离子,中子和α粒子的SET脉冲宽度分布。本文主要针对IBM 130纳米和90纳米批量CMOS工艺的测试结果。;重离子SET测量表明,可测量SET的阈值从130纳米的约7 MeV-cm2 / mg降低至小于90 nm时为2 MeV-cm 2 / mg。在130 nm和90 nm工艺中使用重离子测量了大约100 ps到1 ns以上的SET脉冲宽度,发现从130 nm放大到90 nm时,脉冲宽度会增加。 SET脉冲宽度中的技术缩放趋势将根据实验测量结果以及混合模式3D-TCAD仿真的使用进行说明。研究了在90 nm工艺中在低LET处测得的长瞬态现象的原因,包括脉冲展宽现象。结果表明,较低的驱动电流和减小的与阱区的接触尺寸是导致SET脉冲宽度随缩放比例增加的因素。在这些过程中,由于势阱崩溃效应而触发的寄生双极电荷收集会导致更宽的瞬变。仿真和实验结果表明,对阱区使用更大的接触可减轻阱势能崩溃,从而限制SET脉冲宽度。;这项工作中报道的SET测量是有史以来首次中子和α粒子测量,这些结果是对于预测商业地面应用的错误率非常重要。发现大多数中子和α粒子诱导的SET大约为数百皮秒。发现中子和阿尔法时间故障率(FIT)约为10-5 FIT /逆变器。

著录项

  • 作者

    Narasimham, Balaji.;

  • 作者单位

    Vanderbilt University.;

  • 授予单位 Vanderbilt University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2008
  • 页码 119 p.
  • 总页数 119
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 11:38:49

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