0.8µm SOI CMOS抗辐射加固工艺辐射效应研究

摘要

The paper focused on the radiation-hard 0.8 µm SOI CMOS process, the devices and circuits were fabricated. The devices and circuits’ behavior in Co60 γ ray irradiation circumstances was studied. It shows that the devices with and without the radiation-hard technology had different performance. The hardened devices’ threshold voltage of the front gate shifts less than 0.15 V. The hardened circuits’ standby current, dynamic current and function were also tested. The results showed that the circuits with the radiation-hard process can meet the speciifcation of 100 µA over the total dose range of 500 krad(Si).%采用抗辐射0.8µm SOI CMOS加固技术，研制了抗辐射SOI CMOS器件和电路。利用Co60γ射线源对器件和电路的总剂量辐射效应进行了研究。对比抗辐射加固工艺前后器件的Id-Vg曲线以及前栅、背栅阈值随辐射总剂量的变化关系，得到1 Mrad（Si）总剂量辐射下器件前栅阈值电压漂移小于0.15 V。最后对加固和非加固的电路静态电流、动态电流、功能随辐射总剂量的变化情况进行了研究，结果表明抗辐射加固工艺制造的电路抗总剂量辐射性能达到500 krad（Si）。