Exploration of non-chemically amplified resists based on chain-scission mechanism for 193 nm lithography.

摘要

In order to achieve the requirement for sub-32nm technology, a substitution to chemical amplified photoresist should be explored because it suffers several problems including acid diffusion, environmental sensitivity, process complexity and critical dimension (CD) control. On the other hand, Poly (Methyl methacrylate) (PMMA) has been used for a long time as a chain-scission resist in E-beam as well as DUV. This kind of photoresist has good resolution and small LER compared to CAR. But it has poor sensitivity and etch-resistance. The main goal of this project is to explore roles of resist components and limitation of resolution, sensitivity and LER.;Photoresist derived from PMMA will have base solubility, adequate sensitivity as well as resolution by incorporating TBMA MAA and alphaMEST in the polymer backbone. In this project, new polymers will be synthesized and lithographic characterization will be measured including sensitivity, contrast and etch resistance.