Deep levels in high resistivity AlGaN films grown by MOCVD

摘要

Deep levels in high resistivity layers of AlGaN grown by MOCVD on sapphire were studied by means of dark current and photocurrent versus temperature measurements and by photoinduced current relaxation spectroscopy (PICTS). Strong temeprature quenching of photocurrent was observed and explained by the presence of hole traps with energies 0.2 eV, 0.3 eV and 0.35 eV for films with correspondingly 5