METHOD OF DEPOSITING METALLIC OXIDE THIN FILM USING MOCVD FOR OBTAINING RESISTIVE MEMORY MATERIALS

摘要

PURPOSE: A method of depositing a metallic oxide thin film using an MOCVD(Metal Organic Chemical Vapor Deposition) is provided to obtain resistive memory materials with variable resistance characteristics. CONSTITUTION: An alkoxide precursor is introduced into a reactor(10) with a loaded substrate(12). The second metal-containing precursor is introduced into the reactor. At this time, a metal-containing film is completed on the substrate. The metal-containing film has a formula of M'xM"(1-x)MyOz. The M' is one selected from a group consisting of La, Ce, Pr, Nd, Pm, Sm, Y, Sc, Yb, Lu, and Gd. The M'' is one selected from the group consisting of Mg, Ca, Sr, Ba, Pb, Zn, and Cd. The M is one selected from the group consisting of Mn, Ce, V, Fe, Co, Nb, Ta, Cr, Mo, W, Zr, Hf and Ni. The x has a value from 0 to 1. The y has a value of 0, 1 or 2. The z has an integer value of 1 through 7.