METHOD FOR DEPOSITING METALLIC OXIDE THIN FILM AND APPARATUS FOR DEPOSITING METALLIC OXIDE THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method of depositing a metallic oxide thin film by which a metallic oxide thin film of excellent film quality in which a film shrinkage factor is reduced, and quality control can easily be performed can be obtained even if the deposition of a metallic oxide thin film is carried out at ≤100°C, curing can be eliminated, and production cost can be reduced, and to provide a system for depositing a metallic oxide thin film which is used in the method of depositing a metallic oxide thin film.;SOLUTION: An electric field is applied to the space between counter electrodes in which at least either electrode face is coated with a solid dielectric substance under the pressure in the vicinity of an atmospheric pressure in a gas atmosphere with a metallic compound mixed to generate discharge plasma, so that a thin film of a metallic oxide is deposited on the surface of a base material consisting of a resin or glass at ≤250°C, characteristically at ≤100°C. In this case, the thin film is deposited by arranging the base material on the space between the counter electrodes, or by spraying the metallic oxide made into plasma between the counter electrodes on the base material.;COPYRIGHT: (C)2004,JPO