Ultra-thin-body In0.7Ga0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology

摘要

We report the demonstration of an ultra-thin-body In0.7Ga0.3As-on-nothing N-MOSFET where a self-aligned cavity is formed right beneath the channel layer. Self-aligned Pd-InGaAs source/drain (S/D) contacts were integrated. The gate length LG of 130 nm is the smallest achieved with self-aligned contacts. With effective reduction of subsurface leakage current by the III–V-on-nothing device structure, DIBL of 248 mV/V and SS of 135 mV/decade were achieved.