机译:研究用于InGaAs金属氧化物半导体场效应晶体管中自对准源极/漏极触点形成的Pd-InGaAs
Department of Electrical & Computer Engineering, National University of Singapore, Singapore 117576, Singapore;
Department of Electrical & Computer Engineering, National University of Singapore, Singapore 117576, Singapore;
Department of Electrical & Computer Engineering, National University of Singapore, Singapore 117576, Singapore;
Department of Electrical & Computer Engineering, National University of Singapore, Singapore 117576, Singapore;
Institute of Materials Research and Engineering, A'STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602, Singapore;
Institute of Materials Research and Engineering, A'STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602, Singapore;
Department of Electrical & Computer Engineering, National University of Singapore, Singapore 117576, Singapore;
Palladium; InGaAs; Pd-InGaAs; Ⅲ-V;
机译:具有直接对准键合的自对准镍基金属源极/漏极的InGaAs n沟道和Ge p沟道金属氧化物半导体场效应晶体管的Ⅲ-V/ Ge高迁移率沟道集成
机译:使用Co-InGaAs合金的具有自对准金属源极/漏极的In_(0.53)Ga_(0.47)As金属氧化物半导体场效应晶体管
机译:具有自对准NiGe / Ge结和可大规模缩放的高k栅极叠层的肖特基源/漏锗基金属氧化物半导体场效应晶体管
机译:新型自对准腔形成技术实现了具有Pd-InGaAs源极/漏极触点的超薄In0.7Ga0.3As空载N-MOSFET
机译:气源分子束外延生长的InP / InGaAs异质结双极晶体管和场效应晶体管。
机译:使用自对准和激光干涉光刻技术制造的多栅极ZnO金属氧化物半导体场效应晶体管的性能增强
机译:一种自旋金属氧化物半导体场效应晶体管 用于源极和漏极的半金属铁磁体触点
机译:在刚性和柔性基板上的自对准,极高频III-V金属氧化物半导体场效应晶体管。