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Impact of source/drain contacts formation of self-aligned amorphous-IGZO TFTs on their negative-bias-illumination-stress stabilities

机译：源/排水触点的影响在其负面偏压 - 照明 - 应力稳定性上形成自排列的无定形 - IGZO TFT

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1. Impact of source/drain contacts formation of self-aligned amorphous-IGZO TFTs on their negative-bias-illumination-stress stabilities [J] . Manoj Nag, Soeren Steudel, Steve Smout, Journal of the Society for Information Display . 2015,第7a9期

机译：自对准非晶IGZO TFT的源/漏接触点形成对其负偏压照明应力稳定性的影响
2. Impact of SiN_x capping on the formation of source/drain contact for In-Ga-Zn-O thin film transistor with self-aligned gate [J] . Himchan Oh, Jae-Eun Pi, Chi-Sun Hwang, Applied Physics Letters . 2017,第25期

机译：SiN_x封顶对具有自对准栅的In-Ga-Zn-O薄膜晶体管的源/漏触点形成的影响
3. Low-temperature formation of source-drain contacts in self-aligned amorphous oxide thin-film transistors [J] . Manoj Nag, Robert Muller, Soeren Steudel, Journal of Information Display . 2015,第2期

机译：自对准非晶氧化物薄膜晶体管中源漏接触的低温形成
4. Ultra-thin-body In0.7Ga0.3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology [C] . Xiao Gong, Zhu Zhu, Kong Eugene, VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on . 2012

机译：新型自对准腔形成技术实现了具有Pd-InGaAs源极/漏极触点的超薄In0.7Ga0.3As空载N-MOSFET
5. Implant Activated Source/Drain Regions for Self-Aligned IGZO TFT [D] . Chowdhury, Rahnuma Rifat . 2019

机译：用于自对准IGZO TFT的植入活性源/漏区
6. Highly Conductive and Transparent AZO Films Fabricated by PLD as Source/Drain Electrodes for TFTs [O] . Hongke Zhang, Xiaoqing Li, Zhiqiang Fang, 2018

机译：由PLD制成的高导电性和透明AZO膜作为TFT的源/漏电极
7. Impact of source/drain contacts formation of self-aligned amorphous-IGZO TFTs on their negative-bias-illumination-stress stabilities [O] . Nag Manoj, Steudel Soeren, Smout Steve, 2015

机译：自对准非晶IGZO TFT的源/漏接触点形成对其负偏压照明应力稳定性的影响

Impact of source/drain contacts formation of self-aligned amorphous-IGZO TFTs on their negative-bias-illumination-stress stabilities

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