MOCVD of antimony oxides for gas sensor applications

摘要

Thin films of Sb_2O_3 (senarmonite) have been grown by MOCVD from (~nBuO)_3Sb in the temperature range 500 ― 550℃ without addition of a separate oxygen source. In addition, films of Sb_6O_(13)have been deposited at 600℃ using (EtO)_3Sb as the precursor; this latter process is enhanced by the addition of O_2. Preliminary gas sensor trials using the senarmontite films have shown them to have a very high electrical resistance. They exhibit a rapid response to methane and full recovery once the methane is removed.