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Antimony doped tin oxide thin Films: Co gas sensor

机译:锑掺杂的氧化锡薄膜:Co气体传感器

摘要

in dioxide (SnO2) serves as an important base material in a variety of resistive type gas sensors. The widespread applicability of this semicoducting oxide is related both to its range of conductance variability and to the fact that it responds to both oxidising and reducing gases. The antimony doped tin-oxide films were prepared by spray pyrolysis method. The as-deposited films are blackish in colour. Addition of antimony impurity showed little increase in the thickness. The X-ray diffraction pattern shows characteristic tin oxide peaks with tetragonal structure. As the doping concentration of antimony was increased, new peak corresponding to Sb was observed. The intensity of this peak found to be increased when the Sb concentration was increased from 0.01 % to the 1 % which indicates the antimony was incorporated into the tin oxide. For gas sensing studies ohmic contacts were preferred to ensure the changes in resistance of sensor is due to only adsorption of gas molecule. The graph of I-V shows a straight line in nature which indicates the ohmic contact. The sensitivity of the sensor for CO gas was tested. The sensitivity of antimony doped tin oxide found to be increased with increasing Sb concentration. The maximum sensitivity was observed for Sb = 1 % at a working temperature of 250 °C.When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27892
机译:二氧化碳(SnO2)是各种电阻型气体传感器的重要基础材料。这种半导电氧化物的广泛适用性与其电导率可变性的范围有关,而且与它对氧化性气体和还原性气体都做出反应的事实有关。采用喷雾热解法制备了掺锑氧化锡薄膜。沉积后的薄膜为黑色。锑杂质的添加几乎没有增加厚度。 X射线衍射图显示具有四方结构的特征氧化锡峰。随着锑的掺杂浓度增加,观察到对应于Sb的新峰。当Sb浓度从0.01%增加到1%时,发现该峰的强度增加,这表明锑被掺入氧化锡中。对于气体传感研究,最好使用欧姆接触以确保传感器电阻的变化仅是由于气体分子的吸附引起的。 I-V的曲线图在本质上示出了指示欧姆接触的直线。测试了传感器对CO气体的灵敏度。发现锑掺杂的氧化锡的灵敏度随Sb浓度的增加而增加。在250°C的工作温度下,Sb = 1%时观察到最大灵敏度。引用本文时,请使用以下链接http://essuir.sumdu.edu.ua/handle/123456789/27892

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