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Deposition of antimony and antimony oxides by MOCVD

机译:MOCVD沉积锑和氧化锑

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摘要

Thin films of antimony and antimony oxides have been deposited by metal-organic (MO) CVD from a variety of metal-organic precursors at temperatures in the range 150-650 degreesC under both atmospheric and reduced pressure. Below 400 degreesC, uniform films of pure senarmontite (Sb2O3) with a microstructure and crystal texture that was strongly dependent on the deposition temperature, were deposited. Above 400degreesC, mixed phase material was produced, with isolated crystallites of pure antimony becoming the dominant phase as the temperature was increased. The maximum temperature at which pure senarmontite could be formed was higher for larger precursor ligands. Addition of oxygen to the precursor flow led to the production of higher antimony oxidation states.
机译:锑和锑氧化物的薄膜已经通过金属有机(MO)CVD在常压和减压下于150-650℃的温度下从各种金属有机前体中沉积出来。在低于400摄氏度时,会沉积均匀的纯硒酸钠(Sb2O3)薄膜,其微观结构和晶体织构强烈依赖于沉积温度。高于400℃,产生混合相材料,随着温度升高,纯锑的分离的微晶成为主导相。对于较大的前体配体,可以形成纯硒矿的最高温度更高。将氧气添加到前体流中会导致产生更高的锑氧化态。

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