MOCVD PGO thin films deposited on indium oxide for feram applications

摘要

Methods of forming depositing a ferroelectric thin film, such as PGO, by preparing a substrate with an upper surface of silicon, silicon oxide, or a high-k material, such as hafnium oxide, zirconium oxide, aluminum oxide, and lanthanum oxide, depositing an indium oxide film over the substrate, and then depositing the ferroelectric film using MOCVD.