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Selective etching processes of silicon nitride and indium oxide thin films for FeRAM device applications
Selective etching processes of silicon nitride and indium oxide thin films for FeRAM device applications
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机译:FeRAM器件应用中的氮化硅和氧化铟薄膜的选择性刻蚀工艺
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摘要
A dry etch process is described for selectively etching silicon nitride from conductive oxide material for use in a semiconductor fabrication process. Adding an oxidant in the etch gas mixture could increase the etch rate for the silicon nitride while reducing the etch rate for the conductive oxide, resulting in improving etch selectivity. The disclosed selective etch process is well suited for ferroelectric memory device fabrication using conductive oxide/ferroelectric interface having silicon nitride as the encapsulated material for the ferroelectric.
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