Polysilicon Source-Gated Transistors for Mixed-Signal Systems-on-Panel

摘要

Thin-film polysilicon technology is widely used in large area electronics, such as flat panel displays and touch-sensitive input devices (1) due to its ability to deliver large scale integrated circuits at a comparatively low cost. Significant research efforts have been made recently towards integration of complex electronic circuitry directly onto the flat panel, resulting in System on Panel (SoP) architectures (2). However, polysilicon thin-film field-effect transistors (FETs) have generally modest performance when being used in analog circuits. A relatively new device structure, the source-gated transistor (SGT) (3), has the potential to extend the applicability of disordered semiconductors to analog and mixed signal circuits.