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Polysilicon Source-Gated Transistors for Mixed-Signal Systems-on-Panel

机译:用于混合信号系统的多晶硅源门晶体管 - 面板

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Thin-film polysilicon technology is widely used in large area electronics, such as flat panel displays and touch-sensitive input devices (1) due to its ability to deliver large scale integrated circuits at a comparatively low cost. Significant research efforts have been made recently towards integration of complex electronic circuitry directly onto the flat panel, resulting in System on Panel (SoP) architectures (2). However, polysilicon thin-film field-effect transistors (FETs) have generally modest performance when being used in analog circuits. A relatively new device structure, the source-gated transistor (SGT) (3), has the potential to extend the applicability of disordered semiconductors to analog and mixed signal circuits.
机译:薄膜多晶硅技术广泛用于大面积电子设备,如平板显示器和触敏输入装置(1),因为它能够以相对低的成本提供大规模集成电路。最近,最近将复杂的电子电路直接集成到平板上的显着研究工作,导致面板上的系统(SOP)架构(2)。然而,当在模拟电路中使用时,多晶硅薄膜场效应晶体管(FET)通常具有适度的性能。相对较新的器件结构,源通门晶体管(SGT)(3)具有延长无序半导体对模拟和混合信号电路的适用性。

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