A Quasi-Two-Dimensional Threshold Voltage Model for Fully Depleted SOI LDMOS

摘要

The potential distribution for the channel depletion layer of fully depleted SOI LDMOS was obtained by using quasitwo-dimensional approach, and an analytical threshold voltage model was established. The accuracy of the model is verified by comparison with the results of 2-D semiconductor device simulator MEDICI. From this model, we can find how the channel length, channel doping concentration, the thickness of silicon film and gate oxide influences the threshold voltage. Otherwise, the variation of threshold voltage is independent on back-gate bias.