THEORETICAL PREDICTION OF SWITCHING IN MOS/SOI TRANSISTOR WITH ULTRATHIN OXIDE

摘要

Influence of tunneling through the ultrathin gate oxide on electrical characteristics of the MOS/SOI is theoretically considered. The developed model predicts a switching action if the semiconductor body potential is floating. The switching mechanism relies on a positive feedback between the majority carrier tunnel current and the body potential. If this phenomenon is confirmed experimentally, the MOS/SOI transistor can be used as an electrical switch controlled by a very small gate tunnel current.