ANALYSIS OF MICROSTRUCTURAL PROPERTIES OF SIMOX WAFERS WITH PHOTOLUMINESCENCE

摘要

A new room-temperature Photoluminescence (PL) method has been used to analyze thin layer quality in Separation-by-Implantation-of-Oxygen (SIMOX) wafers. The method allows to generate PL maps of the wafers and to scan the areas of interest at high resolution. Various experimental samples with controlled density of specific microstructural defects were generated and analyzed. Reflectance and photoluminescence maps were compared to categorize and identify nature of observed defects. The analysis was extended to the quality of commercial SIMOX wafers showing significant defect reduction in present vintage of thin buried oxide SIMOX wafers.