GAP FILLING Cu ELECTROPLATING TECHNOLOGY FOR DAMASCENED ULSI INTERCONNECT PROCESS

摘要

Cu damascene process has been developed to replace the conventional aluminum metallization with lower resistance, higher speed and reduced fabrication cost. The damascene process requires a Cu deposition process that can give reliable gap filling for ever-decreasing geometries. Cu electroplating process has excellent gap filling capabilities. This paper summarizes the super-conformal deposition results obtained by CuTek where the deposition rate at small trench bottoms can be made greater than that at trench top or over the field region. This phenomenon will be explained and illustrated with experimental results. Furthermore, the stability of this process has been demonstrated over a very long plating time.