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ELECTROPLATING CHEMISTRY FOR THE CU FILLING OF SUBMICRON FEATURES OF VLSI/ULSI INTERCONNECT
ELECTROPLATING CHEMISTRY FOR THE CU FILLING OF SUBMICRON FEATURES OF VLSI/ULSI INTERCONNECT
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机译:VLSI / ULSI互连亚微米功能的CU填充的电镀化学
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摘要
A copper electroplating bath and a method to plate substrates with the bath are provided. The bath and method are particularly effective to plate electronic components such as semiconductive wafer VLSI and ULSI interconnects with void-free fill copper plating for circuitry forming vias and trenches and other small features less than 0.2 microns with high aspect ratios. The copper bath contains a bath soluble organic divalent sulfur compound, and a bath soluble polyether compound such as a block copolymer of polyoxyethylene and polyoxypropylene, a polyoxyethylene or polyoxypropylene derivative of a polyhydric alcohol and a mixed polyoxyethylene and polyoxypropylene derivative of a polyhydric alcohol. A preferred polyether compound is a mixed polyoxyethylene and polyoxypropylene derivative of glycerine. A preferred copper bath also contains a pyridine compound derivative.
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