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Electrochemical and Simulative Studies of Trench Filling Mechanisms in the Copper Damascene Electroplating Process

机译:铜镶嵌电镀工艺中沟槽填充机理的电化学和模拟研究

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摘要

The role of additives in copper electroplating baths in the damascene process has been investigated. We proposed a bottom-up filling model and confirmed it by comparing the experimental and simulation results. Janus Green B and Basic Blue 3 which absorb on the copper surface and suppress copper deposition were examined for additive use to improve filling capability. Damascene copper grew uniformly in the bath that contained Basic Blue 3. But it grew preferentially from the bottom of the trench for Janus Green B. Addition of Janus Green B produced a continuous concentration gradient in the sub-micron trench when the additive's diffusion rate and consumption rate on the copper surface were well balanced, we estimated filling profiles from numerical simulation using parameters that were determined by an electrochemical method. These profiles agreed well with the experimental results.
机译:已经研究了在镶嵌工艺中添加剂在铜电镀液中的作用。我们提出了一个自下而上的填充模型,并通过比较实验和仿真结果进行了确认。检查了在铜表面吸收并抑制铜沉积的Janus Green B和Basic Blue 3的添加剂用途,以提高填充能力。镶嵌铜在含有碱性蓝3的镀液中均匀生长。但是对于Janus Green B,其优先生长在沟槽底部。当添加剂的扩散速率和扩散速率增加时,Janus Green B的添加会在亚微米沟槽中产生连续的浓度梯度。铜表面上的消耗速率非常平衡,我们使用通过电化学方法确定的参数通过数值模拟估算了填充曲线。这些概况与实验结果非常吻合。

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