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Electroless Cu deposition process on TiN for ULSI interconnect fabrication via Pd/Sn colloid activation

机译:TiN上的无电镀Cu沉积工艺,用于通过pd / sn胶体活化制造ULsI互连

摘要

In this study, (100)-orientation silicon wafer coated with TiN barrier is catalyzed by a Pd/Sn colloid, which serves as, an activator for electroless copper deposition. After activation, electroless deposition of Cu occurs on the catalytic surface. The coverage of the Cu deposit reaches 100% and the adsorptive amount of Pd is greatly increased by the conditioning process. The correlation between deposition rate, resistivity, morphology, crystal structure, and composition of the deposit when varying the temperature of the plating bath is discussed. The deposition rate of Cu is monitored by both the electrochemical method and the profilometer (alpha-step), while the other properties of the deposit are measured by four-point probe, scanning electron microscopy (SEM), x-ray diffraction (XRD), and Auger electron microscopy (AES). Deposition at 70degreesC is favorable due to the higher deposition rate, lower resistivity, less impurities, and more preferred orientation in the crystal structure than that at lower temperature. Problems regarding adhesion and high resistivity can be greatly mitigated via 400degreesC thermal annealing. The resistivity of Cu can be reduced to 2.2 muOmegacm. Moreover, trenches of 1 mum and 0.25 mum on patterned wafer have been successfully filled by electroless deposition of Cu with the aid of surfactant C12.
机译:在这项研究中,涂覆有TiN势垒的(100)取向硅片是由Pd / Sn胶体催化的,该胶体用作化学镀铜的活化剂。活化后,在催化表面上发生化学镀的铜沉积。通过调节过程,Cu沉积物的覆盖率达到100%,并且Pd的吸附量大大增加。讨论了在改变镀液温度时,沉积速率,电阻率,形态,晶体结构和沉积物成分之间的关​​系。铜的沉积速率通过电化学方法和轮廓仪(阿尔法步骤)进行监测,而沉积物的其他性质则通过四点探针,扫描电子显微镜(SEM),X射线衍射(XRD)进行测量和俄歇电子显微镜(AES)。与在较低温度下相比,由于较高的沉积速率,较低的电阻率,较少的杂质以及更优选的晶体结构取向,因此在70℃下进行沉积是有利的。通过400°C的热退火可以大大减轻有关粘附性和高电阻率的问题。 Cu的电阻率可以降低到2.2μΩ·cm。此外,借助于表面活性剂C12的化学镀铜沉积,已经成功地填充了图案化晶片上1μm和0.25μm的沟槽。

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