THE TRUE CONTACT AREA FOR FRICTION IN CHEMICAL MECHANICAL POLISHING

摘要

The higher clock speeds of advanced integrated circuits (IC) have demanded porous dielectric structures and materials. These porous materials have lower shear strength than dense SiO2 which was the former standard. The rubbing action of CMP may generate forces large enough to damage these porous materials. One route to limiting this damage is to understand and control the coefficient of friction of CMP. This work endeavors to understand the source of this friction so it can be better controlled.