Forming contacts in ICs involves chemically-mechanically polishing structure resulting from applying mask layer, forming opening, etching contact hole, applying liner, contact material

摘要

The method involves producing a substrate (10) with insulating layer (15), providing a hard mask layer (20), structuring an opening in the mask layer according to the contact to be formed, optionally providing a spacer layer (40) in the opening, etching a contact hole using the opening, applying a liner coating (50), applying a contact material (60) so as to fill the contact hole and chemically-mechanically polishing the resulting structure.