Packaging and Characterization of Silicon Carbide Thyristor Power Modules

摘要

The need for high-voltage power semiconductor devices in utility applications ranging from isolating faults within a quarter cycle and efficient use of renewal energy resources is rapidly growing. To this end, silicon carbide thyristor power modules were fabricated and characterized electrically. In particular, three SiC thyristors were attached on a common direct bond copper substrate with a copper heat spreader to form a power module. Series resistances were inserted to achieve a good matching of their on-state currents. Experimental results revealed that this power module offered good thermal matching for parallel operation.