Static and Dynamic Characterization of High Power Silicon Carbide BJT Modules

摘要

Silicon carbide (SiC) based power semiconductor devices are now considered as key components for future power applications where high power density, high temperature, and high ruggedness against radiation are key parameters, thanks to the exceptional material properties including lower conduction and switching losses offered by the SiC devices. This paper deals with static and dynamic measurements performed for SiC-based bipolar junction transistors power modules with voltage rating 1200 V and current rating 800 A. The power modules are fabricated in flexible half-bridge configuration in order to allow either full power module with 2400 V and 800 A as one power switch or by using two parallel 1200 V and 400 A half-bridge legs. Results from engineering samples show overall good confidence as promised by the manufacturer for most of the transistor samples. A 40–50% reduction in the current gain was observed when temperature was increased to 475 K as expected. Bipolar devices have been found out fairly stable under continuous static operation at nominal current levels.