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Method of making a silicon carbide power device by at least partially removing an n-type silicon carbide substrate, and a silicon carbide power device so produced
Method of making a silicon carbide power device by at least partially removing an n-type silicon carbide substrate, and a silicon carbide power device so produced
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机译:通过至少部分地去除n型碳化硅衬底来制造碳化硅功率器件的方法以及如此制造的碳化硅功率器件
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摘要
A silicon carbide power device is fabricated by forming a p-type silicon carbide epitaxial layer on an n-type silicon carbide substrate, and forming a silicon carbide power device structure on the p-type silicon carbide epitaxial layer. The n-type silicon carbide substrate is at least partially removed, so as to expose the p-type silicon carbide epitaxial layer. An ohmic contact is formed on at least some of the p-type silicon carbide epitaxial layer that is exposed. By at least partially removing the n-type silicon carbide substrate and forming an ohmic contact on the p-type silicon carbide epitaxial layer, the disadvantages of using a p-type substrate may be reduced or eliminated. Related structures are also described.
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