Comparison of the Power Cycling Performance of Silicon and Silicon Carbide Power Devices in a Baseplate Less Module Package at Different Temperature Swings

摘要

In this work, the power cycling performance of silicon carbide MOSFETs in comparison to silicon IGBTs was investigated. For this purpose, several power cycling tests with multiple temperature swings on silicon IGBTs and silicon carbide MOSFETs in identical packages and with the same package technology (die attach, number and diameter of bond wires) were performed, to allow a direct comparison between both device types. Subsequently, the applicability of the CIPS08 lifetime model on the obtained lifetime data is investigated. The test results show, that the data for the silicon IGBTs are in very good agreement with the CIPS08 model. In contrast, the data for the SiC MOSFETs deviate significantly from the modeled curves and neither the CIP08 model with its original parameter nor a parameter fit on the model yield satisfactory results.