首页>
外国专利>
High power silicon carbide and silicon semiconductor device package
High power silicon carbide and silicon semiconductor device package
展开▼
机译:大功率碳化硅和硅半导体器件封装
展开▼
页面导航
摘要
著录项
相似文献
摘要
A silicon carbide semiconductor field effect transistor and a silicon metal oxide semiconductor field effect transistor are packaged as a hybrid field effect transistor having a high voltage resistance provided by the silicon carbide device and a low switch-on resistance provided by the silicon device. The two devices are co-packaged electrode-on-electrode. A die-on-die configuration reduces the footprint of the hybrid device, and a side-by-side configuration provides an increased area for thermal management of the hybrid device.
展开▼