Brandenburg University of Technology Cottbus-Senftenberg, Institute of Physics, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany;
University of Stuttgart, Institute of Semiconductor Engineering, Pfaffenwaldring 47, 70569 Stuttgart, Germany;
University of Stuttgart, Institute of Semiconductor Engineering, Pfaffenwaldring 47, 70569 Stuttgart, Germany;
University of Stuttgart, Institute of Semiconductor Engineering, Pfaffenwaldring 47, 70569 Stuttgart, Germany;
University of Stuttgart, Institute of Semiconductor Engineering, Pfaffenwaldring 47, 70569 Stuttgart, Germany;
Brandenburg University of Technology Cottbus-Senftenberg, Institute of Physics, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany;
Silicon Photonics; Germanium; Germanium-Tin; light emitting diodes; Electroluminescence;
机译:通过分子束外延生长在Ge(001)衬底上生长的GeSn薄膜的位错相关光致发光
机译:在稀薄的Si_(0.4)Ge_(0.6)/ LT-Si_(0.4)Ge_(0.6)/ Si(001)虚拟衬底上生长的应变Ge量子阱中的高迁移率空穴
机译:硅基锗虚拟衬底上生长的拉伸应变Ge / Si_(0.13)Ge_(0.87)量子阱的室温光致发光
机译:Si(001)种植GESN虚拟基板上应变Ge的发光
机译:通过分子束外延生长的碳化硅/硅(001)和碳化锗/锗(001)合金中的碳结合途径和晶格位点分布。
机译:Ge虚拟衬底上的拉伸应变Si0.13Ge0.87 / Ge多量子阱的室温电致发光
机译:MBE在(001)Si / Ge虚拟晶片上生长的Ge / GeSn纳米结构的热稳定性