A method of epitaxial growth of cubic phase, nitrogen-based compound semiconductor thin films on a semiconductor substrate, for example a 001 substrate, which is periodically patterned with grooves oriented parallel to the 110 crystal direction and terminated in sidewalls, for example 111 sidewalls. The method can provide an epitaxial growth which is able to supply high-quality, cubic phase epitaxial films on a 001 silicon substrate. Controlling nucleation on sidewall facets, for example 111, fabricated in every groove and blocking the growth of the initial hexagonal phase at the outer region of an epitaxial silicon layer with barrier materials prepared at both sides of each groove allows growth of cubic-phase thin film in each groove and either be extended to macro-scale islands or coalesced with films grown from adjacent grooves to form a continuous film. This can result in a wide-area, cubic phase nitrogen-based compound semiconductor film on a 001 substrate.
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