Tailoring of the nitrogen profile in thin gate oxides using substrate nitridation by nitric oxide

摘要

Direct nitridation of the silicon substrate using gaseous NO at 550-700 deg C, 10 mbar is studied using physical (SIMS, TEM, XPS) and electrical characterisations. The nitrogen profile can be tailored for the fabrication of thin nitrided oxides as in the case of implanted nitrogen. Degradation of the I(V) characteristics has been evidenced when the nitrogen amount increases.